By Ivan A. Parinov
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Additional resources for Advanced Nano- and Piezoelectric Materials and Their Applications
Open black and grey circles represent Si, С and О atoms, respectively, big open circles represent Si adlayer atoms. The clip shows two corner Si adatoms and the location of adsorbed O . 34 V. V. Polyakov The oxidation of the specially cleaned 6Н-SiC (11 2 0) surface was carried out at room temperature, 500, 600, 700 and 800 C . Non-stoichiometric SiO2 layer is formed in the samples oxidized at room temperature. Based on the experimental data , the most probable atomic configuration of the 6НSiC (11 2 0) surface, oxidized at room temperature, was suggested in Figure 7.
15, while for silicon it is observed under pressure of р = 1 (humidity 100 %). Therefore, it is possible to make a thick oxide controlling Н2О and О2 flow Development and Study of Silicon Dioxide Nanostructured Films … 37 rates on the Si-face. e. the rate of the flow, comprising water vapor and oxygen). For samples (1-4) from Table 2, there is an increase in oxide thickness with increasing the gas flow rate. However, the gas flow rate of sample 5 is lower than the one of samples 1-4, while the oxide is thicker.
The n-type and p-type samples were oxidized simultaneously. Silicon samples were also used to control the oxidation process. 636). All the oxides thickness was between 40 and 50 nm, except for the wet oxidized Cface samples. Their thickness was 130 nm. The values of thickness of the oxide layers, formed on the surface of silicon carbide, are presented in Table 1. The table shows the effect of surface type on the oxidation rate. The capacitor dependencies of the samples under investigation are shown in Figure 8 – 11 .